डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2386 | NPN Transistor 2SD2386
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2386
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB15 |
Toshiba Semiconductor |
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2SD2386 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2386
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:V |
SavantIC |
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