डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD235 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD235
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DESCRIPTION ·With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power am |
SavantIC |
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2SD235 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB435 |
INCHANGE |
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2SD2351 | General Purpose Transistor 2SD2351
General Purpose Transistor (50V, 150mA)
Parameter
VCEO IC
Value
50V 150mA
lFeatures 1)High DC current gain.
2)High emitter-base voltage. (VCBO=12V)
3)Low saturation voltage. (Max. VCE(sat)=300mV |
Rohm |
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2SD2352 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2352
Power Amplifier Applications
2SD2352
Unit: mm
• High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.3 V (t |
Toshiba Semiconductor |
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2SD2353 | Silicon NPN transistor 2SD2353
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.
特征 / Features
直流增益高,VCESAT 饱和 |
BLUE ROCKET ELECTRONICS |
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2SD2353 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
2SD2353
Unit: mm
• High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (t |
Toshiba Semiconductor |
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2SD2357 | Silicon NPN Transistor Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1537
Unit: mm
s Features
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
q q q
1.0–0.2
+0.1
Low collector t |
Panasonic Semiconductor |
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