डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2300 | Silicon NPN Transistor 2SD2300
Silicon NPN Triple Diffused
Application
CTV horizontal deflection output
Features
• High breakdown voltage VCBO = 1500 V • Built-in damper diode type
Outline
TO-3PFM
2
1. Base 2. Collector 3. E |
Hitachi Semiconductor |
|
2SD2300 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2300
www.datasheet4u.com
DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·For |
SavantIC |
|
2SD2300 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Minimum |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |