2SD2257 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2257 Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturat

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to typ

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2S