डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2241 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2241
Switching Applications
2SD2241
Unit: mm
• High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary t |
Toshiba Semiconductor |
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2SD2241 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2241
www.datasheet4u.com
DESCRIPTION ·With TO-220F package ·High DC current gain : hFE=2000 (Min) ·Low saturation voltage · |
SavantIC |
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2SD2241 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
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INCHANGE |
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