डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2232 | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2232
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·High DC Current Gain
: hFE= 3000(Min) @ IC= 5A, VCE= |
INCHANGE |
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2SD2230 | NPN Transistor | NEC |
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2SD2236 | Power Transistor | Inchange Semiconductor |
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2SD2230 | NPN Silicon Transistor | Guangdong Kexin Industrial |
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2SD2232 | NPN Transistor | INCHANGE |
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2SD2237 | Power Transistor | Inchange Semiconductor |
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