2SD218 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A ·Minimum Lot-to-Lot varia

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Free Datasheet http://www.datasheet4u.com/

Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation v

SMD Type Silicon NPN Epitaxial Planar Type 2SD2185 Transistors Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion