डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2140 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 ·Minimum Lot-to-Lot variations for robust d |
Inchange Semiconductor |
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2SD2144 | High-current Gain Medium Power Transistor | Rohm |
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2SD2144S | High-current Gain Medium Power Transistor | Rohm |
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2SD2141 | Silicon NPN Transistor | Sanken electric |
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2SD2140 | Power Transistor | Inchange Semiconductor |
|
2SD2143 | Medium Power Transistor | Rohm |
|
2SD2142K | High-gain Amplifier Transistor | Rohm |
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2SD2148 | SILICON POWER TRANSISTOR | SavantIC |
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2SD2142 | NPN Transistor | SeCoS Halbleitertechnologie GmbH |
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2SD2142 | NPN Transistors | Kexin |
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2SD2141 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |