डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2129 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2129
2SD2129
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 |
Toshiba Semiconductor |
|
2SD2129 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2129
www.datasheet4u.com
DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation volt |
SavantIC |
|
2SD2129 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Ga |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |