डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2114 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
2SD2114 TRANSISTOR (NPN)
FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat).
MARKING: BBV,B |
JCST |
|
2SD2114 | NPN Transistor Elektronische Bauelemente
2SD2114
0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain. High Emitter-Ba |
SeCoS |
|
2SD2114K | High-current Gain Medium Power Transistor 2SD2114K
High-current Gain Medium Power Transistor (20V, 500mA)
Parameter
VCEO IC
Value
20V 0.5A
lFeatures
1)High DC current gain 2)High emitter-base voltage. VEBO=12V 3)Low VCE(sat). VCE(sat)=180mV( |
Rohm |
|
2SD2114K | Power Transistor SMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.1 |
Kexin |
www.DataSheet.in | 2017 | संपर्क |