डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2113 | Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gai |
Inchange Semiconductor |
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2SD211 | SILICON POWER TRANSISTOR | SavantIC |
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2SD2118 | Transistor | Rohm |
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2SD2114K | High-current Gain Medium Power Transistor | Rohm |
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2SD2117 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SD2115S | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD2112 | Power Transistor | Inchange Semiconductor |
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2SD2114 | NPN Transistor | SeCoS |
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2SD2114K | Power Transistor | Kexin |
|
2SD2118 | NPN Transistor | Transys |
|
2SD2118 | Silicon NPN Power Transistor | Inchange Semiconductor |
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