2SD211 डाटा शीट PDF( Datasheet )

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD211 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min.) ·Low Collector Saturation Voltage·Hi

isc Silicon NPN Darlington Power Transistor 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Curr

www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Ga

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gai