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2SD2108 | Silicon NPN Transistor www.DataSheet4U.com
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2SD2108
Transient Thermal Resistance
10
Thermal resistance θj-c (°C/W)
3 TC = 25°C
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1.0
0.3
0.1 1m
10m
100m
1.0
10 |
Hitachi Semiconductor |
|
2SD2108 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD2108
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Curr |
INCHANGE |
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