डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2102 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 1000( |
Inchange Semiconductor |
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2SD2102 | Silicon NPN Triple Diffused Transistor 2SD2102
Transient Thermal Resistance Thermal resistance θj-c (°C/W)
10
3 TC = 25°C 1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
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Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |