डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2094 | Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain |
Inchange Semiconductor |
|
2SD2092 | NPN TRANSISTOR | Toshiba Semiconductor |
|
2SD2091 | NPN Transistor | Rohm |
|
2SD2095 | Silicon NPN Power Transistors | Inchange Semiconductor |
|
2SD2095 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD2096 | NPN Transistor | Rohm |
|
2SD2097 | Transistor | Rohm |
|
2SD2098 | Transistor | Kexin |
|
2SD2091 | NPN Transistor | INCHANGE |
|
2SD2094 | Power Transistor | Inchange Semiconductor |
|
2SD2093 | SILICON POWER TRANSISTOR | SavantIC |
www.DataSheet.in | 2017 | संपर्क |