डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2083 | Silicon NPN Transistor Darlington
2SD2083
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=–1A VCB=10V |
Sanken electric |
|
2SD2083 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Complement to Type 2SB138 |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |