डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2012 | NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High po |
Toshiba Semiconductor |
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2SD2012 | NPN Silicon Power Transistor ®
2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING
DESCR |
STMicroelectronics |
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2SD2012 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2012
www.datasheet4u.com
DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·C |
SavantIC |
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2SD2012 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2012
DESCRIPTION ·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage-
: VCE(sat)= 1.0V (Max) ·High Power Dissipation
: PC= |
INCHANGE |
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2SD2012 | NPN Silicon Power Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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2SD2012
Features
• High DC Current Gain: hFE(1) =100 |
MCC |
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