2SD200 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD200 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICAT

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High Speed Switching ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2001 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust de