डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1986 | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1986
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·Low Coll |
INCHANGE |
|
2SD198 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1981 | NPN Transistor | Sanyo Semicon Device |
|
2SD198 | NPN Transistor | INCHANGE |
|
2SD1980 | Power Transistor | Rohm |
|
2SD1980 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1985 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD1985A | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD1985 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1986 | NPN Transistor | INCHANGE |
|
2SD1985A | SILICON POWER TRANSISTOR | SavantIC |
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