डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1928 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1928
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 4A ·Minimum Lot-to-Lot vari |
Inchange Semiconductor |
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2SD1922 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1929 | Transistor | Rohm |
|
2SD1928 | Power Transistor | Inchange Semiconductor |
|
2SD1923 | NPN Transistor | INCHANGE |
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