डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1918 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·High fT:fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% aval |
Inchange Semiconductor |
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2SD1918 | Power Transistor 2SD1918
NPN 1.5A 160V Middle Power Transistor
Parameter
VCEO IC
Value
160V 1.5A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V
4) Lead Free/R |
Rohm |
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2SD1918 | Silicon NPN Transistor SMD Type
Silicon NPN Epitaxial 2SD1918
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V
+0.2 9.7 |
Kexin |
www.DataSheet.in | 2017 | संपर्क |