2SD1898 डाटा शीट PDF( Datasheet )

Production specification Power Transistor(80V,1A) FEATURES  High VCEO,VCEO=80V.  High IC,IC=1A(DC).  Good HFE Linearity.  Low VCE(sat).  Complement the 2SB1260. Pb Lead-free 2SD1898 APPLICATI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1898 TRANSISTOR (NPN) FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Compl

2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB126

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR  FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity *Low VCE(SAT) *Complements the 2SB1260 1 SOT-223 3 2 1 SOT-

Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellent DC C

RoHS 2SD1898 2SD1898 TRANSISTOR (NPN) SOT-89 FEATURES z High VCEO z High IC z Good hFE linearity z Low VCE (sat) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Sy