2SD1895 डाटा शीट PDF( Datasheet )

Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PFa package www.datasheet4u.com ·High DC current gain ·Low collector saturation voltage ·Complem