डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1891 | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1891
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min) ·High DC Current Gain
: hFE= 5000(Min) @IC= 3A ·Low Collect |
INCHANGE |
|
2SD1899 | NPN Transistor | JCET |
|
2SD1899-Z | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1897 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1899 | NPN Transistor | Weitron |
|
2SD1899-Z | NPN Transistor | NEC |
|
2SD1899 | NPN Silicon Transistor | NEC |
|
2SD1898 | Power Transistor | Rohm |
|
2SD1899 | NPN Epitaxial Planar Silicon Transistors | GME |
|
2SD1896 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1899-K | NPN Transistor | MCC |
www.DataSheet.in | 2017 | संपर्क |