डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1889 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1340 ·M |
INCHANGE |
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2SD1889 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1889
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1340 ·High DC current gain A |
SavantIC |
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