डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1816L | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Collector Power Dissipation
: PC= 2 W(Max) ·Minimum Lot-to-Lot variations for robust device
perform |
Inchange |
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2SD1816 | NPN TRANSISTOR | UTC |
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2SD1816L | Silicon NPN Power Transistor | Inchange |
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2SD1816 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD1816 | NPN Transistors | Kexin |
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2SD1816 | Bipolar Transistor | ON Semiconductor |
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2SD1816 | PNP/NPN Transistor | Sanyo Semicon Device |
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2SD1816 | NPN Epitaxial Planar Silicon Transistor | SeCoS |
www.DataSheet.in | 2017 | संपर्क |