2SD180 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum L

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, ele

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller ·Low coll

Ordering number : EN2112C 2SB1201/2SD1801 SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulator

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller ·Low coll

Transys Electronics LIMITED TO-251/TO-252-2Plastic-Encapsulated Transistors 2SD1802 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 Collector-base voltage A V(