डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1782K | Power Transistor 2SD1782K
Power Transistor (80V, 500mA)
Parameter
VCEO IC
Value
80V 500mA
lFeatures
1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=0.5A/50mA) 2)High breakdown voltage. BVCEO=80V 3)Complements the 2SB11 |
Rohm |
|
2SD1782K | Power Transistor SMD Type
TransistIoCrs
Power Transistor 2SD1782K
Features
Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0 |
Kexin |
www.DataSheet.in | 2017 | संपर्क |