2SD1782 डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide cust

Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lead-free APPLICATIONS z Epitaxial planar type NPN silicon tra

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1782 TRANSISTOR (NPN) FEATURES z Low VCE(sat) z High BVCEO z Complements the 2SB1198 SOT-23 1. BASE 2. EMITTER 3. C

2SD1782K Power Transistor (80V, 500mA) Parameter VCEO IC Value 80V 500mA lFeatures 1)Low VCE(sat) 　 VCE(sat)=0.2V(Typ.) 　 (IC/IB=0.5A/50mA) 2)High breakdown voltage. 　 BVCEO=80V 3)Complements the 2SB11

SMD Type TransistIoCrs Power Transistor 2SD1782K Features Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0