2SD1781 डाटा शीट PDF( Datasheet )

Elektronische Bauelemente 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Very low VCE(sat).VCE(sat) < 0.4

2SD1781K Medium Power Transistor (32V, 800mA) Parameter VCEO IC Value 32V 800mA lFeatures 1)Very low VCE(sat). 　 VCE(sat)=0.1V(Typ.) 　(IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Comp

RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector

Elektronische Bauelemente 2SD1781K NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (I

SMD Type TransistIoCrs Medium Power Transistor 2SD1781K Features Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.

2SD1781K Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 饱和压降低,可与 2SB1197K

2SD1781K FRA Medium Power Transistor (32V, 800mA) Parameter VCEO IC Value 32V 800mA lFeatures 1)Very low VCE(sat). 　 VCE(sat)=0.1V(Typ.) 　(IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)