डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1769 | Silicon NPN Transistor Darlington
2SD1769
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f |
Sanken electric |
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2SD1769 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1769
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Satura |
INCHANGE |
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