डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1765 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1765
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 1A ·High DC Cu |
INCHANGE |
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2SD1765 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1765
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequen |
SavantIC |
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