2SD1762 डाटा शीट PDF( Datasheet )

Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FStructure Epitaxial p

Power Transistor(50V,3A ) FEATURES  Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）  Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating tempera

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1762 TRANSISTOR (NPN) FEATURES z Low VCE(sat) z Complements the 2SB1185 TO – 220 1. BASE 2. COLLECTOR 3. EMITTER

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 2A ·Complement to Type 2SB1185 ·Minimu

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1762 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 AP