2SD1760 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche

Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1184. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specifi

Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transis

Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low VCE(sat). VCE(sat) = 0.5V(Typ.) (

SMD Type NPN Transistors 2SD1760 Transistors ■ Features ● Low VCE (sat) ● Complementary to 2SB1184 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.151 .5 0 -0.15 0.80+0.1 -0.