2SD1758 डाटा शीट PDF( Datasheet )

Medium Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1758 TRANSISTOR (NPN) TO-252-2L 1.BASE FEATURES z Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 2.COLLEC

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial plana

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1758 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complement to Type 2SB1182 ·Good Linearity of hFE ·100% avalan

Transys Electronics L I M I T E D www.DataSheet4U.com TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3.

www.DataSheet4U.com SMD Type Medium Power Transistor 2SD1758 TO-252 Transistors Features Low VCE(sat), VCE(sat) = 0.5V (IC = 2A, IB = 0.2A). Epitaxial planar type +0.2 9.70 -0.2 +0.15 1.50 -0.15 Unit: mm 2.