2SD1707 डाटा शीट PDF( Datasheet )

Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1156 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter s

isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Co