डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1692 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 100V(min.) ·DC Current Gain—
: hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 ·M |
INCHANGE |
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2SD1692 | NPN Transistor DATA SHEET
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FEATURES
• High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) |
NEC |
www.DataSheet.in | 2017 | संपर्क |