डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1680 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performa |
INCHANGE |
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2SD1680 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1680
www.datasheet4u.com
DESCRIPTION ·With TO-3PFa package ·High speed switching ·High VCBO ·Large collector power dissipat |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |