डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1646 | Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·High DC Current Gain
: hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltage ·Minimu |
Inchange Semiconductor |
|
2SD1641 | SILICON PNP TRIPLE DIFFUSED PLANAR TYPE TRANSISTOR | Panasonic Semiconductor |
|
2SD1649 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1640 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD1647 | NPN Silicon Transistor | Rohm |
|
2SD1640 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1646 | Power Transistor | Inchange Semiconductor |
|
2SD1645 | Silicon NPN epitaxial planar type Transistor | Panasonic Semiconductor |
|
2SD1647 | NPN Transistor | INCHANGE |
|
2SD1649 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |