2SD1609 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Ty

2SD1609, 2SD1610 www.DataSheet4U.com Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base

UNISONIC TECHNOLOGIES CO., LTD 2SD1609 NPN SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC 2SD1609 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applica

2SD1609 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package.  特征 / Features 与 2SB1109 互补。 Complemen