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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1604 | NPN Transistor www.DataSheet4U.com
www.DataSheet4U.com
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Hitachi Semiconductor |
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2SD1604 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1104 ·Minim |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |