2SD157 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 5

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1571 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching ·High v

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimu

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1572 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust dev

isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATION