2SD1535 डाटा शीट PDF( Datasheet )

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm s Features q q q q Extremely satisf

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTO