डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1500 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1500
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum |
Inchange Semiconductor |
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2SD1509 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SD1505 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1506 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1507M | NPN Silicon Transistor | Rohm |
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2SD1506 | NPN Transistor | INCHANGE |
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2SD1504 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1505 | NPN Transistor | INCHANGE |
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2SD1503 | NPN Transistor | INCHANGE |
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2SD1509 | Silicon NPN Power Transistor | Inchange Semiconductor |
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