डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1480 | Silicon NPN Transistor Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1052
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 |
Panasonic Semiconductor |
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2SD1480 | NPN Transistor isc Silicon NPN Power Transistor
2SD1480
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Com |
INCHANGE |
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