डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1466 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1466
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage-
: VCE(sat |
INCHANGE |
|
2SD1460 | Silicon NPN Transistor | Toshiba |
|
2SD1468 | NPN Transistor | SeCoS |
|
2SD1468S | MEDIUM POWER TRANSISTOR | Rohm |
|
2SD1466 | NPN Transistor | INCHANGE |
|
2SD1468S | NPN Transistor | SeCoS |
www.DataSheet.in | 2017 | संपर्क |