डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1390 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS |
Inchange Semiconductor |
|
2SD1397 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1392 | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR | ETC |
|
2SD1391 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1398 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1399 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1390 | Power Transistor | Inchange Semiconductor |
|
2SD1396 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1391 | NPN Transistor | INCHANGE |
|
2SD1396 | NPN Transistor | INCHANGE |
|
2SD1395 | NPN Triple Diffused Planar Silicon Darlington Transistor | Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |