डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1386 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1386
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 4A ·Low Satur |
INCHANGE |
|
2SD1384 | Epitaxial Planar NPN Silicon Transistor | Rohm |
|
2SD1380 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1383K | High-gain Amplifier Transistor | Rohm |
|
2SD1382 | NPN Transistor | ROHM Electronics |
|
2SD1382 | Epitaxial Planar NPN Silicon Transistor | ETC |
|
2SD1381F | Power Transistor | Rohm |
|
2SD1385 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD1386 | NPN Transistor | INCHANGE |
|
2SD1380 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |