डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1378 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 ·Minimum Lot-to |
Inchange Semiconductor |
|
2SD1379 | NPN Transistor | Rohm |
|
2SD1378 | Power Transistor | Inchange Semiconductor |
|
2SD1375 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1370 | NPN Transistor | INCHANGE |
|
2SD1376 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1376 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1375 | NPN Transistor | INCHANGE |
|
2SD1376K | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1377K | Silicon NPN Transistor | Hitachi |
|
2SD1377 | Silicon NPN Transistor | Hitachi |
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