2SD1376 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD1376 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltag |
 INCHANGE |
|
| 2SD1376 | Silicon NPN Transistor 2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1
1
2
3 |
 Hitachi Semiconductor |
|
| 2SD1376 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1376
·
www.datasheet4u.com
DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low |
 SavantIC |
|
| 2SD1376K | Silicon NPN Transistor 2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1
1
2
3 |
Hitachi Semiconductor |
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